WeEn 1200V IGBTs

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg.

“Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.”

Ratings are 650V 75A, 1.2kV 40A and 1.2kV 75A, in TO247 or TO247-4L packaging. Bare die and module variants are possible.

Electronics Weekly has requested part numbers and product page links.

Maximum operational junction temperature is 175°C and “all devices have undergone high-voltage H3TRB [high-humidity, high-temperature and high-voltage reverse bias] and 100%-biased HTRB [high-temperature reverse bias] tests up to this maximum”, said WeEn.

Applications are foreseen in solar inverters, motor controls, uninterruptible power supplies and welding.

WeEn Semiconductors spun off from NXP in 2015.