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Renesas TP70H135G4PLSGB

Features

Ultra‑fast switching Gen IV Plus GaN
JEDEC‑qualified GaN technology
Robust design with defined transient over‑voltage capability
Compatible with E‑mode gate drivers; no Zener protection required
Extremely low crossover loss
Negligible Q_rr
RoHS‑compliant, halogen‑free packaging
Low reverse‑conduction drop (V_SD)

Find Other Products in GaN Power Discretes

Description

The TP70H135G4PLSGB 700V, 135mΩ gallium nitride (GaN) FET is a normally‑off device built on Renesas' Gen IV Plus platform. It combines a state‑of‑the‑art high‑voltage GaN high electron mobility transistor (HEMT) with a low‑voltage silicon MOSFET to deliver superior performance, standard gate‑drive compatibility, ease of adoption, and high reliability.

The Gen IV Plus SuperGaN^® platform uses advanced epitaxial and patented device technologies to simplify manufacturability while improving efficiency through lower gate charge, reduced output capacitance, minimized crossover loss, and lower reverse‑recovery charge.

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