TSMC Enters 2nm Production in Volume

“TSMC’s 2nm (N2) technology has started volume production in 4Q25 as planned,” says a notice on TSMC’s web-site, “N2 technology features first-generation nanosheet transistor technology, with full-node strides in performance and power consumption.”

”TSMC also developed low-resistance redistribution layer (RDL) and super high-performance metal-insulator-metal (MiM) capacitors to further boost performance.’, adds the notice.

“TSMC N2 technology will be the most advanced technology in the semiconductor industry in terms of both density and energy efficiency,” continues  the statement, “N2 technology, with leading nanosheet transistor structure, will deliver full-node performance and power benefits to address the increasing need for energy-efficient computing.”

”With our strategy for continuous enhancements, N2 and its derivatives will further extend TSMC technology leadership well into the future,” concludes the notice.

N2 is designed to deliver a 10%–15% performance gain at the same power, a 25%–30% reduction in power at the same performance, and a 15% increase in transistor density compared to N3E for mixed designs that include logic, analog, and SRAM. For logic-only designs, transistor density is up to 20% higher than N3E.