TPS7H6003-SP
Radiation-hardened QMLV, 200-V half-bridge eGaN gate driver
The TPS7H6003-SP is a 200-V radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features adjustable dead time capability, small 30-ns propagation delay and 5.5-ns high-side and low-side matching. This part also includes internal high-side and low-side LDOs which ensure a drive voltage of 5 V regardless of supply voltage. The TPS7H6003-SP has split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H6003-SP features two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate driver also offers user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The driver can also be utilized for both half-bridge and dual-low side converter applications.
Bus voltage (max) (V)200Power switchGaNFETInput VCC (min) (V)10Input VCC (max) (V)16Peak output current (A)1.3Operating temperature range (°C)-25 to 255Undervoltage lockout (typ) (V)8RatingSpacePropagation delay time (µs)0.035Rise time (ns)0.4Fall time (ns)4Iq (mA)0.5Input thresholdTTLChannel input logicTTL/PWMFeaturesDead time control, Interlock, Internal LDODriver configurationHalf bridge
Radiation Performance:
Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100 krad(Si)
Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm 2/mg
Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75 MeV-cm 2/mg
1.3-A peak source, 2.5-A peak sink current
Two operational modes:
Selectable input interlock protection in independent input mode
Split outputs for adjustable turn-on and turn-off times
30-ns typical propagation delay in independent input mode
5.5-ns typical delay matching
