Nexperia 1200V 20A SiC Schottky Diode

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability.

For 10ms half-sine pulses its rating is 135A, 91A²/s at 25°C, and 100A, 50A²/s at 150°C. A square pulse of 710A can be withstood for 10μs at 25°C.

There is a choice of packaging for the same die:

• PSC20120L has a through-hole TO-247

• PSC20120J has a surface mount D2PAK

The company emphasises the diode’s good ‘Q x Vf’ figure-of-merit, without publishing it – the data sheet reveals total Q = 85nC at 800V, 200A/µs, 20A and 25°C.

Operation in either package is over -55 to +175°C junction temperature, and the 20A current rating is with the case up to 135°C.

The only slight difference between the package ratings is that the surface mount version can handle 200W at 25°C which reduces to 190W for the through-hole.

Use is expected in industrial applications, particularly server infrastructure, telecommunications equipment and solar inverters.

Find the diodes on these Nexperia product pages:
PSC20120J D2PAK
PSC20120L TO247

Just yesterday Vishay announced 1,200V merged PiN-Schottky diodes, this time rated at 1 or 2A in a diminutive 2.6 x 5.2mm surface-mount package.