STMicroelectronics GaN Transistors

ST has launched a family of GaN power semiconductors in the STPOWER portfolio

The first device in ST’s new G-HEMT transistor family is the 650V SGT120R65AL with 120mΩ maximum on-resistance (R_DS(on)), 15A maximum current capability, and a Kelvin source connection for optimum gate driving.

It is available now in an industry-standard PowerFLAT 5×6 HV compact surface-mount package, at $3.00 (1000 pieces). Its typical applications are PC adaptors, USB wall chargers, and wireless charging.

650V GaN transistors in development are available now as engineering samples. These include the SGT120R65A2S with 120mΩ R_DS(on) in an advanced laminated package, the 2SPAK™, which eliminates wire bonding to boost efficiency and reliability in high-power and high-frequency applications, as well as the SGT65R65AL and SGT65R65A2S both with 65mΩ R_DS(on) in PowerFLAT 5×6 HV and 2SPAK, respectively. Volume production for these products is expected in H2 2022.

In addition, a new cascode GaN transistor, SGT250R65ALCS with 250mΩ R_DS(on) in a PQFN 5×6, belonging to the G-FET family, will be available for sampling in Q3 2022.

G-FET transistor family is a very fast, ultra-low Q_rr, robust GaN cascode or d-mode FET with standard silicon gate-drive for a wide range of power applications.

G-HEMT  transistor family is an ultra-fast, zero Q_rr e-mode HEMT, easily parallelable, well suited for very high frequency and power applications.

G-FET and G-HEMT are both belonging to the PowerGaN family of STPOWER product portfolio.

For more information, go to www.st.com/gan-transistors and www.st.com/gan-hemt-transistors.